FIR80N075P mosfet equivalent, n-channel power mosfet.
ƽ VDS=75V；ID=80A@ VGS=10V； RDS(ON)<8mΩ @ VGS=10V
ƽ Special process technology for high ESD capability ƽ Special designed for Convertors and power controls ƽ High density .
Features
ƽ VDS=75V；ID=80A@ VGS=10V； RDS(ON)<8mΩ @ VGS=10V
ƽ Special process technology for high ESD capability ƽ Specia.
The FIR80N075PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
Features
ƽ VDS=75V；ID=80A@ VGS=10V； RDS(ON)<8mΩ @ V.
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